MIG10J503 Selling Leads, Price trend, MIG10J503 DataSheet download, circuit diagram from SeekIC.com

Features: · The 4th generation trench gate thin wafer NPT IGBT is adopted.· FRD is built in.· The level shift circuit by high-voltage IC is built in.· The simplification of a high side driver power supply is possible by the bootstrap system.· Short Circuit Protection, Over Temperature Protection ,...

See larger image

SeekIC No. : 004421252 Detail

MIG10J503: Features: · The 4th generation trench gate thin wafer NPT IGBT is adopted.· FRD is built in.· The level shift circuit by high-voltage IC is built in.· The simplification of a high side driver power ...

MIG10J503 Data Sheet

Get Latest Price

Part Number:: MIG10J503
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/11/14

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Product Details

Description

Features:

· The 4th generation trench gate thin wafer NPT IGBT is adopted.
· FRD is built in.
· The level shift circuit by high-voltage IC is built in.
· The simplification of a high side driver power supply is possible by the bootstrap system.
· Short Circuit Protection, Over Temperature Protection , and the Power Supply Under Voltage Protection function are built in.
· Short Circuit Protection and Over Temperature Protection state are outputted.
· The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at the time of vector control.
· Low thermal resistance by adoption of original high thermal conduction resin.

Pinout

Connection Diagram

Specifications

Item	Symbol	Condition	Min.	Typ.	Max.	Unit
Operating Power Supply Voltage	V_BB	-	50	300	400	V
	V_CC	-	13.5	15	17
	V_BS	-	13.5	15	17
Current dissipation	I_BB	V_BB = 400 V ､VIN = 5 V(1arm)	-	-	1	mA
	I_CC	V_CC = 15 V､VIN = 5 V(1arm)	-	0.8	1.5	mA
	I_CC	V_CC = 15 V､VIN = 0 V(1arm)	-	1.1	1.5	mA
	I_BS	V_CC = 15 V､VIN = 5 V(1arm)	-	330	600	A
	I_BS	V_CC = 15 V､VIN = 0 V(1arm)	-	470	1000	A
input Voltage	V_IH	V_IN = "H"	3.5	2.8	-	V
input Voltage	V_IL	V_IN = "L"	-	2.3	1.5	V
input Voltage hysteresis	V_INhys	V_IN= "H""L"	-	0.5	-	V
input Voltage hysteresis	V_INhys	V_IN = "L""H"	-	0.5	-	V
Input Current	I_IH	V_CC = 15 V､VIN = 5V	50	100	200	A
Input Current	I_IL	V_CC = 15 V､VIN = 0 V	75	150	300	A
IGBT Saturation Voltage	V_satU	V_CC = VBS=15V, IC = 10 A, Upper Arm	-	1.5	2.0	V
IGBT Saturation Voltage	V_satL	V_CC = 15V, IC = 10 A, Lower Arm	-	1.5	2.0	V
FRD Forward Voltage	V_FU	I_F = 10 A, Upper Arm	-	1.3	1.9	V
FRD Forward Voltage	V_FL	I_F = 10 A, Lower Arm	-	1.3	1.9	V
Fault Output Voltage	V_FO	I_FO = 5 mA,	-	0.8	1.2	V
Short Current Protection Voltage	V_R	Short Current Protection	0.45	0.5	0.55	V
Short Current Protection delay time	V_Rtd	Short Current Protection	0.5	1	2	s
Over Temperature Protection	TSD	Over Temperature Protection	150	165	200	°C
Over Temperature Protection hys.	TSD	Over Temperature Protection return	-	20	-	°C
Under Voltage Protection	V_BSUVD	Upper Arm Under Voltage Protection	10.0	11.0	12.0	V
Under Voltage Protection recovery	V_BSUVR	Upper Arm Under Voltage Protection recovery	10.5	11.5	12.5
Under Voltage Protection	V_CCUVD	Lower Arm Under Voltage Protection	10.5	11.5	12.5
Under Voltage Protection recovery	V_ccUVR	Lower Arm Under Voltage Protection recovery	11.0	12.0	13.0
IGBT turn-on propagation delay time	t_dON	V_BB = 300 V, IC = 10A, Inductance Load	-	1.3	TBD	s
IGBT rise time	t_r	V_BB = 300 V, IC = 10A, Inductance Load	-	0.1	TBD
IGBT turn-on time	t_ON	V_BB = 300 V, IC = 10A, Inductance Load	-	1.4	TBD
IGBT turn-off propagation delay time	t_dOFF	V_BB = 300 V, IC = 10A, Inductance Load	-	1.2	TBD
IGBT fall time	t_f	V_BB = 300 V, IC = 10A, Inductance Load	-	0.1	TBD
IGBT turn-off time	t_OFF	V_BB = 300 V, IC = 10A, Inductance Load	-	1.3	TBD
IGBT vertical arm turn-on, a turn-off propagation delay time lag	\| t_OFFL- t_ONH\|	V_BB = 300 V, IC = 10A, Inductance Load (include each Phase)	-	0	300	ns
IGBT vertical arm turn-on, a turn-off propagation delay time lag	\| t_OFFH- t_ONL\|	V_BB = 300 V, IC = 10A, Inductance Load (include each Phase)	-	0	300	ns
daed time	t_daed	V_BB = 300 V, IC = 10A, Inductance Load	1	-	-	s
FRD reverse recovery time	t_rr	V_BB = 300 V, IF = 10 A	-	100	-	ns

Customers Who Bought This Item Also Bought

TOSHIBA MODULE:MIG100J101H
US $$150.00 - 150.00 / Piece

Supply Ability:200Week

View details
MIG100J101HD TOSHIBA Intelligent Power Module Silicon N Channel IGBT
US $$8.20 - 27.86 / Piece

Supply Ability:2000Week

View details
MIG100J101HE TOSHIBA Intelligent Power Module Silicon N Channel IGBT
US $$9.84 - 33.44 / Piece

Supply Ability:2001Week

View details
MIG100J201H N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
US $$12.30 - 41.80 / Piece

Supply Ability:2002Week

View details
MIG100J202H N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
US $$11.07 - 37.62 / Piece

Supply Ability:2003Week

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

MIG10J503

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Switches(5620)

Programmers, Development Systems(1039)

Tools(7611)

Integrated Circuits (ICs)(111140)

Sensors, Transducers(2877)

Inductors, Coils, Chokes(1216)