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MIE-534A4

Features: `High radiant power and high radiant intensity` Suitable for DC and high pulse current operation` Standard T-1 3/4 ( 5mm ) package, radiant angle : 30°` Peak wavelength p = 940 nm` Good spectral matching to si-photodetectorSpecifications Parameter Maximum Rating Unit Powe...

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SeekIC No. : 004421240 Detail

MIE-534A4: Features: `High radiant power and high radiant intensity` Suitable for DC and high pulse current operation` Standard T-1 3/4 ( 5mm ) package, radiant angle : 30°` Peak wavelength p = 940 nm` Good sp...

MIE-534A4 Data Sheet

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Part Number:
MIE-534A4
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

`High radiant power and high radiant intensity
` Suitable for DC and high pulse current operation
` Standard T-1 3/4 (  5mm ) package, radiant angle : 30°
` Peak wavelength p = 940 nm
` Good spectral matching to si-photodetector


Specifications

Parameter
Maximum Rating
Unit
Power Dissipation
120
mW
Peak Forward Current(300pps,10ms pulse)
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds



Description

The MIE-534A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package.


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