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MIE-384A4

Features: ` High radiant power and high radiant intensity` Suitable for DC and high pulse current operation` Special T-1 ( 3mm ) package` Peak wavelength p = 940 nm` Good spectral matching to si-photodetector` Radiant angle : ±14°Specifications Parameter Maximum Rating Unit ...

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MIE-384A4: Features: ` High radiant power and high radiant intensity` Suitable for DC and high pulse current operation` Special T-1 ( 3mm ) package` Peak wavelength p = 940 nm` Good spectral matching to si-ph...

MIE-384A4 Data Sheet

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Part Number:
MIE-384A4
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

` High radiant power and high radiant intensity
` Suitable for DC and high pulse current operation
` Special T-1 ( 3mm ) package
` Peak wavelength p = 940 nm
` Good spectral matching to si-photodetector
` Radiant angle : ±14°


Specifications

Parameter
Maximum Rating
Unit
Power Dissipation
120
mW
Peak Forward Current
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds



Description

The MIE-384A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package.


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