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MIE-334L3

Features: ` High power and high radiant intensity` Suitable for DC and high pulse current operation` Standard T-1 ( 3mm ) package` Peak wavelength p = 880 nm` Good spectral matching to si-photodetectorSpecifications Parameter Maximum Rating Unit Power Dissipation 120 mW Pe...

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MIE-334L3: Features: ` High power and high radiant intensity` Suitable for DC and high pulse current operation` Standard T-1 ( 3mm ) package` Peak wavelength p = 880 nm` Good spectral matching to si-photodetec...

MIE-334L3 Data Sheet

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Part Number:
MIE-334L3
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

` High power and high radiant intensity
` Suitable for DC and high pulse current operation
` Standard T-1 (  3mm ) package
` Peak wavelength p = 880 nm
` Good spectral matching to si-photodetector


Specifications

Parameter
Maximum Rating
Unit
Power Dissipation
120
mW
Peak Forward Current(300pps,10ms pulse)
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds



Description

The MIE-334L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package.


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