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MIE-184A4

Features: ` High radiant power and high radiant intensity` Suitable for DC and high pulse current operation` Special 1.8mm package, radiation angle: 35°` Peak wavelength p = 940 nm` Good spectral matching to Si-PhotodetectorApplication·Data communication·SIRSpecifications Parameter Maxim...

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MIE-184A4: Features: ` High radiant power and high radiant intensity` Suitable for DC and high pulse current operation` Special 1.8mm package, radiation angle: 35°` Peak wavelength p = 940 nm` Good spectral ma...

MIE-184A4 Data Sheet

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Part Number:
MIE-184A4
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

` High radiant power and high radiant intensity
` Suitable for DC and high pulse current operation
` Special 1.8mm package, radiation angle: 35°
` Peak wavelength p = 940 nm
` Good spectral matching to Si-Photodetector


Application

·Data communication
·SIR


Specifications

Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Peak Forward Current(300pps,10ms pulse)
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds



Description

The MIE-184A4 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package.


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