Features: ·NPT IGBT technology·low saturation voltage·low switching losses·switching frequency up to 30 kHz·square RBSOA, no latch up·high short circuit capability·positive temperature coefficient for easy parallelling·MOS input, voltage controlled·ultra fast free wheeling diodes·package with DCB ...
MID 100-12 A3: Features: ·NPT IGBT technology·low saturation voltage·low switching losses·switching frequency up to 30 kHz·square RBSOA, no latch up·high short circuit capability·positive temperature coefficient f...
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Features: ·NPT IGBT technology·low saturation voltage·low switching losses·switching frequency up ...
Features: NPT IGBT technologylow saturation voltagelow switching lossesswitching frequency up to 3...
Features: ·NPT IGBT technology·low saturation voltage·low switching losses·switching frequency up ...
Symbol |
Conditions |
Maximum |
Ratings |
VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 k |
1200 1200 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V |
IC25 IC80 ICM |
TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms |
135 90 180 |
A A A |
tSC (SCSOA) |
VGE = ±15 V, VCE = VCES, TJ = 125° C RG = 10, non repetitive |
10 |
s |
RBSOA |
VGE= ±15 V, TJ = 125°C, RG = 10 Clamped inductive load, L = 100 H |
ICM =150 VCEK < VCES |
A |
Ptot |
TC = 25°C |
|
W |
TJ Tstg |
150 -40 ... +150 |
°C °C | |
VISOL |
50/60 Hz, RMS t = 1 min IISOL 1 mA t = 1 s Insulating material: Al2O3 |
4000 8000 |
V~ V~ |
Md |
Mounting torque (module) (teminals) |
2.25-2.75 20-25 2.5-3.7 22-33 |
Nm lb.in. Nm lb.in. |
dS dA a |
Creepage distance on surface dA Strike distance through air Max. allowable acceleration |
12.7 |
mm mm m/s2 |
Weight |
Typical |
130 4.6 |
g oz. |