MID-32H22

Features: `Wide range of collector current`Lensed for high sensitivity`Low cost plastic package`Good spectral matching IRED (p 880/850 nm) type`Acceptance view angle : 40oSpecifications Parameter Maximum Rating Unit Power Dissipation 100 mW Collector-Emitter Voltage 3...

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MID-32H22 Picture
SeekIC No. : 004421189 Detail

MID-32H22: Features: `Wide range of collector current`Lensed for high sensitivity`Low cost plastic package`Good spectral matching IRED (p 880/850 nm) type`Acceptance view angle : 40oSpecifications Par...

floor Price/Ceiling Price

Part Number:
MID-32H22
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

`Wide range of collector current
`Lensed for high sensitivity
`Low cost plastic package
`Good spectral matching IRED (p 880/850 nm) type
`Acceptance view angle : 40o



Specifications

Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds



Description

The MID-32H22 is a NPN silicon phototransistor mounted in a lensed , special dark plastic package. The lensing effect of the package allows an acceptance half view angle of 20° that is measured from the optical axis to the half power point .


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