MID-14H22

Features: ·Wide range of collector current·Lensed for high sensitivity· Low cost plastic package· For 850nm IRSpecifications Parameter Maximum Rating Unit Power Dissipation 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Operating Temp...

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MID-14H22 Picture
SeekIC No. : 004421185 Detail

MID-14H22: Features: ·Wide range of collector current·Lensed for high sensitivity· Low cost plastic package· For 850nm IRSpecifications Parameter Maximum Rating Unit Power Dissipation 100 ...

floor Price/Ceiling Price

Part Number:
MID-14H22
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

·Wide range of collector current
·Lensed for high sensitivity
· Low cost plastic package
· For 850nm IR



Specifications

Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds



Description

The MID-14H22 is a NPN silicon phototransistor moun- ted  in a lensed ,black plastic and  side looking package.


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