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MHPM7A30A60B

Specifications Rating Symbol Value Unit Peak Repetitive Reverse Voltage (TJ = 125°C) VRRM 1200 V Average Output Rectified Current IO 8.0 A Peak Non-repetitive Surge Current (1/2 cycle )(1) IFSM 200 A IGBT Reverse Voltage VCES 1200 V Gate-Emitter Voltage VGES ± ...

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MHPM7A30A60B: Specifications Rating Symbol Value Unit Peak Repetitive Reverse Voltage (TJ = 125°C) VRRM 1200 V Average Output Rectified Current IO 8.0 A Peak Non-repetitive Surge Current (1...

MHPM7A30A60B Data Sheet

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Part Number:
MHPM7A30A60B
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage (TJ = 125°C) VRRM 1200 V
Average Output Rectified Current IO 8.0 A
Peak Non-repetitive Surge Current (1/2 cycle )(1) IFSM 200 A
IGBT Reverse Voltage VCES 1200 V
Gate-Emitter Voltage VGES ± 20 V
Continuous IGBT Collector Current ICmax 8.0 A
Peak Repetitive IGBT Collector Current(2) IC(pk) 16 A
Continuous Free-Wheeling Diode Current IFmax 8.0 A
Peak Repetitive Free-Wheeling Diode Current(2) IF(pk) 16 A
IGBT Power Dissipation per die (TC = 95°C) PD 50 W
Free-Wheeling Diode Power Dissipation per die (TC = 95°C) PD 30 W
Junction Temperature Range TJ 40 to +125 °C
Short Circuit Duration (VCE = 600V, TJ = 25°C) tsc 10 ms



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