Features: • Short Circuit Rated 10 s@ 125°C, 400 V• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)• Compact Package Outline• Access to Positive and Negative DC Bus• Independent Brake Circuit Connections• UL Recognition PendingSpecifications Rating S...
MHPM7A20E60DC3: Features: • Short Circuit Rated 10 s@ 125°C, 400 V• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)• Compact Package Outline• Access to Positive and Negative DC Bus• ...
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Features: • Short Circuit Rated 10 s @ 125°C• Pin-to-Baseplate Isolation Exceeds 2500 ...
Features: • Short Circuit Rated 10 s@ 125°C• Pin-to-Baseplate Isolation Exceeds 2500 V...
Features: • Short Circuit Rated 10 s@ 125°C, 400 V• Pin-to-Baseplate Isolation Exceeds...
Rating |
Symbol |
Value |
Unit |
Repetitive Peak Input Rectifier Reverse Voltage (TJ = 25°C to 150°C)
|
VRRM |
900 |
V |
IGBT Reverse Voltage |
VCES |
600 |
V |
Gate-Emitter Voltage |
VGES |
±20 |
V |
Continuous IGBT Collector Current (TC = 25°C) |
ICmax |
20 |
A |
Continuous IGBT Collector Current (TC = 80°C) |
ICmax |
15.8 |
A |
Repetitive Peak IGBT Collector Current (1) |
IC(pk) |
40 |
A |
Continuous FreeWheeling Diode Current (TC = 25°C) |
IFmax |
20 |
A |
Continuous FreeWheeling Diode Current (TC = 80°C) |
IF80 |
14.1 |
A |
Repetitive Peak FreeWheeling Diode Current (1) |
IF(pk) |
40 |
A |
Average Converter Output Current (PeaktoAverage ratio of 10, TC = 95°C) |
IOmax |
20 |
A |
IGBT Power Dissipation per die (TC = 95°C) |
PD |
25 |
W |
FreeWheeling Diode Power Dissipation per die (TC = 95°C) |
PD |
17 |
W |
Junction Temperature Range |
TJ |
40 to +150 |
°C |
Short Circuit Duration (VCE = 720 V, TJ = 125°C) |
tsc |
10 |
s |
Isolation Voltage, pin to baseplate |
VISO |
2500 |
Vac |
Operating Case Temperature Range |
TC |
40 to +95 |
°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Mounting Torque - Heat Sink Mounting Holes |
- |
12 |
lbin |