Specifications Rating Symbol Value Unit Peak Repetitive Reverse Voltage (TJ = 125°C) VRRM 1200 V Average Output Rectified Current IO 8.0 A Peak Non-repetitive Surge Current (1/2 cycle )(1) IFSM 200 A IGBT Reverse Voltage VCES 1200 V Gate-Emitter Voltage VGES ± ...
MHPM7A16A120B: Specifications Rating Symbol Value Unit Peak Repetitive Reverse Voltage (TJ = 125°C) VRRM 1200 V Average Output Rectified Current IO 8.0 A Peak Non-repetitive Surge Current (1...
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Features: • Short Circuit Rated 10 s @ 125°C• Pin-to-Baseplate Isolation Exceeds 2500 ...
Features: • Short Circuit Rated 10 s@ 125°C• Pin-to-Baseplate Isolation Exceeds 2500 V...
Features: • Short Circuit Rated 10 s@ 125°C, 400 V• Pin-to-Baseplate Isolation Exceeds...
Rating | Symbol | Value | Unit |
Peak Repetitive Reverse Voltage (TJ = 125°C) | VRRM | 1200 | V |
Average Output Rectified Current | IO | 8.0 | A |
Peak Non-repetitive Surge Current (1/2 cycle )(1) | IFSM | 200 | A |
IGBT Reverse Voltage | VCES | 1200 | V |
Gate-Emitter Voltage | VGES | ± 20 | V |
Continuous IGBT Collector Current | ICmax | 8.0 | A |
Peak Repetitive IGBT Collector Current(2) | IC(pk) | 16 | A |
Continuous Free-Wheeling Diode Current | IFmax | 8.0 | A |
Peak Repetitive Free-Wheeling Diode Current(2) | IF(pk) | 16 | A |
IGBT Power Dissipation per die (TC = 95°C) | PD | 50 | W |
Free-Wheeling Diode Power Dissipation per die (TC = 95°C) | PD | 30 | W |
Junction Temperature Range | TJ | 40 to +125 | °C |
Short Circuit Duration (VCE = 600V, TJ = 25°C) | tsc | 10 | ms |