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MHPM6B25N120

Specifications Rating Symbol Value Unit IGBT Reverse Voltage VCES 1200 V Gate-Emitter Voltage VGES ± 20 V Continuous IGBT Collector Current (TC = 80°C) 10A12015A12025A120 ICmax 101525 A Repetitive Peak IGBT Collector Current (1) 10A12015A12025A120 IC(pk) 203050 A ...

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MHPM6B25N120: Specifications Rating Symbol Value Unit IGBT Reverse Voltage VCES 1200 V Gate-Emitter Voltage VGES ± 20 V Continuous IGBT Collector Current (TC = 80°C) 10A12015A12025A120 ICm...

MHPM6B25N120 Data Sheet

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Part Number:
MHPM6B25N120
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Specifications

Rating Symbol Value Unit
IGBT Reverse Voltage VCES 1200 V
Gate-Emitter Voltage VGES ± 20 V
Continuous IGBT Collector Current (TC = 80°C) 10A120
15A120
25A120		 ICmax 10
15
25		 A
Repetitive Peak IGBT Collector Current (1) 10A120
15A120
25A120		 IC(pk) 20
30
50		 A
Continuous Diode Current (TC = 25°C) 10A120
15A120
25A120		 IFmax 10
15
25		 A
Continuous Diode Current (TC = 80°C) 10A120
15A120
25A120		 IF80 8.3
11
14		 A
Repetitive Peak Diode Current (1) 10A120
15A120
25A120		 IF(pk) 20
30
50		 A
IGBT Power Dissipation per die (TC = 95°C) 10A120
15A120
25A120		 PD 41
50
65		 W
Diode Power Dissipation per die (TC = 95°C) 10A120
15A120
25A120		 PD 16
22
27		 W



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