Features: • Short Circuit Rated 10 s@ 125°C, 400 V• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)• Compact Package Outline• Access to Positive and Negative DC Bus• GateEmitter Clamp Diodes for ESD Protection• UL Recognition PendingSpecifications Ratin...
MHPM6B20E60D3: Features: • Short Circuit Rated 10 s@ 125°C, 400 V• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)• Compact Package Outline• Access to Positive and Negative DC Bus• ...
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Features: • Short Circuit Rated 10 s @ 125°C• Pin-to-Baseplate Isolation Exceeds 2500 ...
Features: • Short Circuit Rated 10 s@ 125°C• Pin-to-Baseplate Isolation Exceeds 2500 V...
Features: • Short Circuit Rated 10 s@ 125°C, 400 V• Pin-to-Baseplate Isolation Exceeds...
Rating |
Symbol |
Value |
Unit |
Repetitive Peak Input Rectifier Reverse Voltage (TJ = 25°C to 150°C) |
VRRM |
900 |
V |
IGBT Reverse Voltage |
VGES |
600 |
V |
Gate-Emitter Voltage |
VCES |
±20 |
V |
Continuous IGBT Collector Current (TC = 25°C) |
ICmax |
20 |
A |
Continuous IGBT Collector Current (TC = 80°C) |
IC80 |
15 |
A |
Repetitive Peak IGBT Collector Current (1) |
IC(pk) |
40 |
A |
Continuous FreeWheeling Diode Current (TC = 25°C) |
IFmax |
20 |
A |
Continuous FreeWheeling Diode Current (TC = 80°C) |
IF80 |
14 |
A |
Repetitive Peak FreeWheeling Diode Current (1) |
IF(pk) |
40 |
A |
Average Converter Output Current (PeaktoAverage ratio of 10, TC = 95°C) |
IOmax |
20 |
A |
Continuous Input Rectifier Current (TC = 25°C) |
IDC |
20 |
A |
NonRepetitive Peak Input Rectifier Forward Surge Current (2) (TJ = 95°C prior to start of surge) |
IFSM |
475 |
A |
IGBT Power Dissipation per die (TC = 95°C) |
PD |
25 |
W |
FreeWheeling Diode Power Dissipation per die (TC = 95°C) |
PD |
17 |
W |
Input Rectifier Power Dissipation per die (TC = 95°C) |
PD |
13 |
W |