Features: • Short Circuit Rated 10 s @ 125°C• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)• Compact Package Outline• Access to Positive and Negative DC Bus• UL RecognizedSpecifications Rating Symbol Value Unit IGBT Reverse Voltage VCES ...
MHPM6B15A120D: Features: • Short Circuit Rated 10 s @ 125°C• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)• Compact Package Outline• Access to Positive and Negative DC Bus• UL Rec...
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Features: • Short Circuit Rated 10 s @ 125°C• Pin-to-Baseplate Isolation Exceeds 2500 ...
Features: • Short Circuit Rated 10 s@ 125°C• Pin-to-Baseplate Isolation Exceeds 2500 V...
Features: • Short Circuit Rated 10 s@ 125°C, 400 V• Pin-to-Baseplate Isolation Exceeds...
Rating |
Symbol |
Value |
Unit | |
IGBT Reverse Voltage |
VCES |
1200 |
V | |
Gate-Emitter Voltage |
VGES |
±20 |
V | |
Continuous IGBT Collector Current |
5A120 |
ICmax |
5.0 |
A |
10A120 |
10 | |||
15A120 |
15 | |||
Peak Repetitive IGBT Collector Current (1) |
5A120 |
IC(pk) |
10 |
A |
10A120 |
20 | |||
15A120 |
30 | |||
Continuous Diode Current |
5A120 |
IFmax |
5.0 |
A |
10A120 |
10 | |||
5A120 |
15 | |||
Peak Repetitive Diode Current (1) |
5A120 |
IF(pk) |
10 |
A |
10A120 |
20 | |||
15A120 |
30 | |||
IGBT Power Dissipation per die (TC = 25°C) |
5A120 |
PD |
43 |
W |
10A120 |
65 | |||
15A120 |
82 | |||
Diode Power Dissipation per die (TC = 25°C) |
5A120 |
PD |
19 |
W |
10A120 |
38 | |||
15A120 |
38 | |||
IGBT Power Dissipation per die (TC = 95°C) |
5A120 |
PD |
19 |
W |
10A120 |
29 | |||
15A120 |
36 | |||
Diode Power Dissipation per die (TC = 95°C) |
5A120 |
PD |
8.3 |
W |
10A120 |
17 | |||
15A120 |
17 | |||
Junction Temperature Range |
TJ |
40 to +150 |
°C | |
Short Circuit Duration (VCC = 600 V, TJ = 125°C) |
tsc |
10 |
sec |