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MHPM6B10N120

Features: • Short Circuit Rated 10 s @ 125°C, 720 V• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)• Compact Package Outline• Access to Positive and Negative DC Bus• UL RecognizedSpecifications Rating Symbol Value Unit IGBT Reverse Voltage V...

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SeekIC No. : 004420436 Detail

MHPM6B10N120: Features: • Short Circuit Rated 10 s @ 125°C, 720 V• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)• Compact Package Outline• Access to Positive and Negative DC Bus•...

MHPM6B10N120 Data Sheet

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Part Number:
MHPM6B10N120
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Description



Features:

• Short Circuit Rated 10 s @ 125°C, 720 V
• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
• Compact Package Outline
• Access to Positive and Negative DC Bus
• UL Recognized


Specifications

Rating
Symbol
Value
Unit
IGBT Reverse Voltage
VCES
1200
V
Gate-Emitter Voltage
VGES
±20
V
Continuous IGBT Collector Current (TC = 80°C)
10A120
ICmax
10
A
15A120
15
25A120
25
Repetitive Peak IGBT Collector Current (1)
10A120
IC(pk)
10
A
15A120
15
25A120
25
Continuous Diode Current (TC = 25°C)
10A120
IFmax
20
A
15A120
30
25A120
50
Continuous Diode Current (TC = 80°C)
10A120
IF80
10
A
15A120
15
25A120
25
Repetitive Peak Diode Current (1)
10A120
IF(pk)
8.3
A
15A120
11
25A120
14
IGBT Power Dissipation per die (TC = 95°C)
10A120
PD
20
A
15A120
30
25A120
50
Diode Power Dissipation per die (TC = 95°C)
10A120
PD
41
W
15A120
50
25A120
65
Diode Power Dissipation per die (TC = 95°C)
10A120
PD
16
W
15A120
22
25A120
27



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