MH8V725BAZTJ -6

Features:

·Utilizes industry standard 8M x 8 RAMs in TSOP and industry standard input buffer in TSSOP
·168-pin (84-pin dual dual in-line package)
·Single +3.3V(±0.3V) supply operation
·Low stand-by power dissipation
                      116.2mW(Max) . . . . . . . . . . LVCMOS input level
·Low operation power dissipation
              MH8V725BAZTJ -5 . . . . . . . . . . . . . . . . . . 3.34W(Max)
              MH8V725BAZTJ -6 . . . . . . . . . . . . . . . . . . 3.02W(Max)
·All input are directly LVTTL compatible
·All output are three-state and directly LVTTL compatible
·Includes(0.22uF x 11) decoupling capacitors
·4096 refresh cycle every 64ms (A0~12)
·Hyper-page mode,Read-modify-write,
    /CAS before /RAS refresh,Hidden refresh capabilities
·JEDEC standard pin configuration & Buffered PD pin
·Buffered input except /RAS and DQ
·Gold plating contact pads

Application

Main memory unit for computers , Microcomputer memory


Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vcc	Supply voltage	With respect to Vss	-0.5~ 4.6	V
IO	Output current		50	mA
Pd	Power dissipation	Ta=25°C	10.7	W
Topr	Operating temperature		0~70	°C
Tstg	Storage temperature		-40~100	°C

Description

The MH8V725BAZTJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8 dynamic RAMs in TSOP and three industry standard input buffer in TSSOP.

The mounting of TSOP on a card edge dual in-line package of MH8V725BAZTJ provides any application where high densities and large of quantities memory are required.

MH8V725BAZTJ is a socket-type memory module ,suitable for easy interchange or addition of module.