MH8S72BALD -7

Features:

· Utilizes industry standard 8M x 8 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP
· 168-pin (84-pin dual in-line package)
· single 3.3V±0.3V power supply
· Clock frequency 100MHz
· Fully synchronous operation referenced to clock rising edge
· 4 bank operation controlled by BA0,1(Bank Address)
· /CAS latency- 2/3(programmable)
· Burst length- 1/2/4/8/Full Page(programmable)
· Column access - random
· Auto precharge / All bank precharge controlled by A10
· Auto refresh and Self refresh
· 4096 refresh cycle /64ms
· LVTTL Interface
· Discrete IC and module design conform to PC100 specification.
    (module Spec. Rev. 1.0 and SPD 1.2A(-7,-8), SPD 1.0(-10))


Application

PC main memory


Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vdd	Supply voltage	With respect to Vss	-0.5~ 4.6	V
VI	Input Voltage	With respect to Vss	-0.5 ~ Vdd+0.5	V
VO	Output Voltage	With respect to Vss	-0.5 ~ Vdd+0.5	V
IO	Output current		50	mA
Pd	Power dissipation	Ta=25°C	9	W
Topr	Operating temperature		0~70	°C
Tstg	Storage temperature		-40~100	°C

Description

The MH8S72BALD is 8388608 - word by 72-bit Synchronous DRAM module. This consists of nine industry standard 8Mx8 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP.

The mounting of TSOP on a card edge Dual Inline package of MH8S72BALD provides any application where high densities and large quantities of memory are required.

MH8S72BALD is a socket type - memory modules, suitable for easy interchange or addition of modules.