MH8S72BAFD -8

Features:

·Utilizes industry standard 8M X 8 Synchronous DRAMs in TSOP package , industry standard Resister in TSSOP package
·Single 3.3V +/- 0.3V supply
·LVTTL Interface
·4096 refresh cycles every 64ms
·Discrete IC and module design conform to PC/100 specification.
   (module Spec. Rev. 1.1 and SPD 1.2A)


Application

Main memory unit for computers, Microcomputer memory.


Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vdd	Supply voltage	With respect to Vss	-0.5~ 4.6	V
VI	Input Voltage	With respect to Vss	-0.5~ 4.6	V
VO	Output Voltage	With respect to Vss	-0.5~ 4.6	V
IO	Output current		50	mA
Pd	Power dissipation	Ta=25°C	11	W
Topr	Operating temperature		0~70	°C
Tstg	Storage temperature		-45~100	°C

Description

The MH8S72BAFD is 8388608 - word x 72-bit Synchronous DRAM stacked structural module. This consist of nine industry standard 8M x 8 Synchronous DRAMs in TSOP.

The mounting of TSOP on a card edge dual in-line package of MH8S72BAFD provides any application where high densities and large of quantities memory are required.

MH8S72BAFD is a socket-type memory module ,suitable for easy interchange or addition of module.