MH8S64BMG -10

Features:

·Utilizes industry standard 4M x 16 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP
·168-pin (84-pin dual in-line package)
·single 3.3V±0.3V power supply
·Clock frequency 100MHz
·Fully synchronous operation referenced to clock rising edge
·4 bank operation controlled by BA0,1(Bank Address)
·/CAS latency- 2/3(programmable)
·Burst length- 1/2/4/8/Full Page(programmable)
·Burst type- sequential / interleave(programmable)
·Column access - random
·Auto precharge / All bank precharge controlled by A10
·Auto refresh and Self refresh
·4096 refresh cycle /64ms
·LVTTL Interface
·Discrete IC and module design conform to PC100 specification.
   (module Spec. Rev. 1.0 and SPD 1.2A(-7,-8), SPD 1.0(-10))


Application

PC main memory


Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vdd	Supply voltage	With respect to Vss	-0.5~ 4.6	V
VI	Input Voltage	With respect to Vss	-0.5 ~ Vdd+0.5	V
VO	Output Voltage	With respect to Vss	-0.5 ~ Vdd+0.5	V
IO	Output current		50	mA
Pd	Power dissipation	Ta=25°C	8	W
Topr	Operating temperature		0~70	°C
Tstg	Storage temperature		-40~100	°C

Description

The MH8S64BMG is 8388608 - word by 64-bit Synchronous DRAM module. This consists of eight industry standard 4Mx16 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP.

The mounting of TSOP on a card edge Dual Inline package of MH8S64BMG provides any application where high densities and large quantities of memory are required.

MH8S64BMG is a socket type - memory modules, suitable for easy interchange or addition of modules.