MH64S72VJG-6

Features:

·Utilizes industry standard 64M X 4 Synchronous DRAMs in TSOP package , industry standard Resistered buffer in TSSOP package,industry standard PLL in TSSOP package
·Single 3.3V +/- 0.3V supply
·Max.Clock frequency 133MHz forFully synchronous operation
·referenced to clock rising edge
·4-bank operation controlled by BA0,BA1(Bank Address)
·/CAS latency -2/3(programmable,at buffer mode)
·LVTTL Interface
·Burst length 1/2/4/8/Full Page(programmable)
·Burst type- Sequential and interleave burst (programmable)
·Random column access
·Burst Write / Single Write(programmable)
·Auto precharge / All bank precharge controlled by A10
·Auto refresh and Self refresh
·8192 refresh cycles every 64ms


Application

Main memory or graphic memory in computer systems


Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vdd	Supply Voltage	With respect to Vss	-0.5 ~ 4.6	V
VI	Input Voltage	With respect to Vss	-0.5 ~ 4.6	V
VO	Output Voltage	With respect to Vss	-0.5 ~ 4.6	V
IO	Output Current		50	mA
Pd	Power Dissipation	Ta=25°C	22	W
Topr	Operating Temperature		0~ 70	°C
Tstg	Storage Temperature		-40~ 100	°C

Description

The MH64S72VJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.
 
The TSOP MH64S72VJG on a card edge dual in-line package prov ides any application where high densities and large of quantities memory are required.

MH64S72VJG is a socket-ty pe memory module ,suitable f or easy interchange or addition of module.