MH4V64AXJJ-6S

Features:

·single 3.3V± 0.3V supply
·Low stand-by power dissipation
                      7.2mW- - - - - - - - - LVCMOS input level
·operating power dissipation
                   MH4V64AXJJ-5,5S - - - - - 1584 mW(max.)
                   MH4V64AXJJ-6,6S - - - - - 1440mW(max.)
                   MH4V644AXJJ-5,5S - - - - 2016 mW(max.)
                   MH4V644AXJJ-6,6S - - - - 1872 mW(max.)
·Self refresh capability*
                   Self refresh current - - - - 1600 uA(max.)
·All input, output LVTTL compatible and low capacitance
·Utilizes industry standard 4Mx16 RAMs in TSOP and industry standard EEPROM in TSSOP.
·Includes decoupling capacitor(0.22uFx4)
·Fast page mode , Read-modify-write,
   CAS before RAS refresh,Hidden refresh capabilities.
·Early-write mode,OE to control output buffer impedance


Application

Main memory unit for computer,Microcomputer memory,Refresh memory for CRT.


Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vcc	Supply voltage	With respect to Vss	-0.5~4.6	V
VI	Input voltage		-0.5~4.6	V
VO	Output voltage		-0.5~4.6	V
IO	Output current		50	mA
Pd	Power dissipation	Ta=25°C	4	W
Topr	Operating temperature		0~ 70	°C
Tstg	Storage temperature (SOJ)		-40~ 100	°C

Description

MH4V64AXJJ-6S is family of 4194304 - word by 64 - bit dynamic RAM module. This consists of four industry standard 4Mx16 dynamic RAMs in TSOP and one industry EEPROM in TSSOP.

The mounting of TSOP MH4V64AXJJ-6S on a card edge dual in line package provides any application where high densities and large of quantities memory are required.

MH4V64AXJJ-6S is a socket-type memory module,suitable for easy interchange of addition of modules.