MH4V6445BXJJ-6S

Features:

·single 3.3V± 0.3V supply
·Low stand-by power dissipation
                         7.2mW- - - - - - - - - LVCMOS input level
·operating power dissipation
                    MH4V6445BXJJ-5,5S - - - - 2016 mW(max.)
                    MH4V6445BXJJ-6,6S - - - - 1872 mW(max.)
·Self refresh capability*
                    Self refresh current - - - - 1600 uA(max.)
·All input, output LVTTL compatible and low capacitance
·Utilizes industry standard 4Mx16 RAMs in TSOP
   and industry standard EEPROM in TSSOP.
·Includes decoupling capacitor(0.22uFx4)
·Hyper page mode , Read-modify-write,
   CAS before RAS refresh,Hidden refresh capabilities.
·Early-write mode,OE and W to control output buffer impedance.

Application

Main memory unit for computer,Microcomputer memory,Refresh memory for CRT.


Specifications

Symbol	Parameter	Condition	Ratings	Unit
Vcc	Supply Voltage	with respect to Vss	-0.5 ~ 4.6	V
VI	Input Voltage		-0.5 ~ Vdd+0.5	V
VO	Output Voltage		-0.5 ~ Vdd+0.5	V
IO	Output Current		50	mA
Pd	Power Dissipation	Ta=25°C	4	W
Topr	Operating Temperature		0 ~ 70	°C
Tstg	Storage Temperature		-40 ~ 100	°C

Description

This is family of 4194304 - word by 64 - bit dynamic RAM module. This consists of four industry standard 4Mx16 dynamic RAMs in TSOP and one industry EEPROM in TSSOP.

The mounting of TSOP on a card edge dual in line package of 4194304 provides any application where high densities and large of quantities memory are required.

4194304 is a socket-type memory module,suitable for easy interchange of addition of modules.