MH4S64DBKG -8

Features:

·Utilizes industry standard 4M x 16 Sy nchronous DRAMs TSOP and industry standard EEPROM in TSSOP
·144-pin (72-pin dual in-line package)
·single 3.3V±0.3V power supply
·Clock frequency 100MHz(max.)
·Fully synchronous operation referenced to clock rising edge
·4 bank operation controlled by BA0,1(Bank Address)
·/CAS latency- 2/3(programmable)
·Burst length- 1/2/4/8/Full Page(programmable)
·Burst type- sequential / interleave(programmable)
·Column access - random
·Auto precharge / All bank precharge controlled by A10
·Auto refresh and Self refresh
·4096 refresh cycle /64ms
·LVTTL Interface


Application

main memory or graphic memory in computer systems


Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vdd	Supply Voltage	With respect to Vss	-0.5 ~ 4.6	V
VI	Input Voltage	With respect to Vss	-0.5 ~ Vdd+0.5	V
VO	Output Voltage	With respect to Vss	-0.5 ~ Vdd+0.5	V
IO	Output Current		50	mA
Pd	Power Dissipation	Ta=25°C	4	W
Topr	Operating Temperature		0~ 70	°C
Tstg	Storage Temperature		-40~ 100	°C

Description

The MH4S64DBKG is 8388608 - word by 64-bit Synchronous DRAM module. This consists of four industry standard 4Mx16 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP.
 
The mounting of TSOP MH4S64DBKG on a card edge Dual Inline package provides any application where high densities and large quantities of memory are required.

MH4S64DBKG is a socket type - memory modules, suitable for easy interchange or addition of modules.