MH4S64CBMD-12

Features:

·Utilizes industry standard 2M x 8 Synchronous DRAMs
·TSOP and industry standard EEPROM in TSSOP
·168-pin (84-pin dual in-line package) single 3.3V±0.3V power supply
·Clock frequency 100MHz/83MHz/67MHz
·Fully synchronous operation referenced to clock rising edge
·Dual bank operation controlled by BA(Bank Address)
·/CAS latency- 1/2/3(programmable)
·Burst length- 1/2/4/8(programmable)
·Burst type- sequential / interleave(programmable)
·Column access - random
·Auto precharge / All bank precharge controlled by A10
·Auto refresh and Self refresh
·4096 refresh cycle /64ms
·LVTTL Interface


Application

main memory or graphic memory in computer systems


Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vdd	Supply voltage	With respect to Vss	-0.5~ 4.6	V
VI	Input Voltage	With respect to Vss	-0.5~ 4.6	V
VO	Output Voltage	With respect to Vss	-0.5~ 4.6	V
IO	Output current		50	mA
Pd	Power dissipation	Ta=25°C	16	W
Topr	Operating temperature		0~70	°C
Tstg	Storage temperature		-40~100	°C

Description

The MH4S64CBMD is 4194304-word by 64-bit Synchronous DRAM module. This consists of sixteen industry standard 2Mx8 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP.

The mounting of TSOP on a card edge Dual Inline package of MH4S64CBMD provides any application where high densities and large quantities of memory are required.

MH4S64CBMD is a socket type - memory modules, suitable for easy interchange or addition of modules.