MH32V725BST -6

Features:

·Utilizes industry standard 16M x 4 RAMs SOJ and industry standard input buffer in TSSOP
·168-pin (84-pin dual dual in-line package)
·Single 3.3V(± 0.3V) supply operation
·Low stand-by power dissipation . . . . . . . . . . 135.7mW(Max)
·Low operation power dissipation
             MH32V725BST -5 . . . . . . . . . . . . . . . . . . 14.96W(Max)
             MH32V725BST -6 . . . . . . . . . . . . . . . . . . 13.66W(Max)
·All input are directly LVTTL compatible
·All output are three-state and directry LVTTL compatible
·Includes(0.22 uF x 38) decoupling capacitors
·4096 refresh cycle every 64ms (CBR Ref)
   8192 refresh cycle every 64ms (RAS Only Ref,Normal R/W)
·Hyper-page mpde,Read-modify-write,/CAS before /RAS refresh, Hidden refresh capabilities
·JEDEC standard pin configration & Buffered PD pin
·Buffered input except /RAS and DQ
·Gold plating contact pads


Application

Main memory unit for computers , Microcomputer memory


Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vcc	Supply voltage	With respect to Vss	-0.5~4.6	V
IO	Output current		50	mA
Pd	Power dissipation	Ta=25°C	38	W
Topr	Operating temperature		0~70	°C
Tstg	Storage temperature		-40~125	°C

Description

The MH32V725BST is 33554432-word x 72-bit dynamic ram stacked structural module. This consist of thirty-six industry standard 16M x 4 dynamic RAMs in TSOP and two industry standard input buffer in TSSOP.

The mounting of TSOP on a card edge dual in-line package of MH32V725BST provides any application where high densities and large of quantities memory are required.

MH32V725BST is a socket-type memory module ,suitable for easy interchange or addition of module.