MH32S72DBFA -6

Features:

·Utilizes industry standard 16M X 4 Synchronous DRAMs in TSOP package , industry standard Resister in TSSOP  package , and industry standard PLL in TSSOP package.
·Single 3.3V +/- 0.3V supply
·Burst length 1/2/4/8/Full Page (programmable)
·Burst type sequential / interleave (programmable)
·Column access random
·Burst Write / Single Write (programmable)
·Auto precharge / Auto bank precharge controlled by A10
·Auto refresh and Self refresh
·LVTTL Interface
·4096 refresh cycles every 64ms


Application

Main memory unit for computers, Microcomputer memory.


Specifications

Symbol	Parameter	Condition	Ratings	Unit
Vdd	Supply Voltage	with respect to Vss	-0.5 ~ 4.6	V
VI	Input Voltage	with respect to Vss	-0.5 ~ 4.6	V
VO	Output Voltage	with respect to Vss	-0.5 ~ 4.6	V
IO	Output Current		50	mA
Pd	Power Dissipation	Ta=25°C	39	W
Topr	Operating Temperature		0 ~ 70	°C
Tstg	Storage Temperature		-40 ~ 100	°C

Description

The MH32S72DBFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous DRAMs in TSOP.

The stacked structure of TSOP MH32S72DBFA on a card edge dual inline package provides any application where high densities and large of quantities memory are required.

MH32S72DBFA is a socket-type memory module ,suitable f or easy interchange or addition of module.