MH32S72BBFA -7

Features:

·Utilizes industry standard 16M X 4 Synchronous DRAMs in TSOP package , industry standard Resister in TSSOP package , and industry standard PLL in TSSOP package.
·Single 3.3V +/- 0.3V supply
·Burst length 1/2/4/8/Full Page (programmable)
·Burst type sequential / interleave (programmable)
·Column access random
·Burst Write / Single Write (programmable)
·Auto precharge / Auto bank precharge controlled by A10
·Auto refresh and Self refresh
·LVTTL Interface
·4096 refresh cycles every 64ms

·Intel specifiation(rev. 1.2)compliant PCB and SPD 1.2A


Application

Main memory unit for computers, Microcomputer memory.


Specifications

Symbol	Parameter	Condition	Ratings	Unit
Vdd	Supply Voltage	with respect to Vss	-0.5 ~ 4.6	V
VI	Input Voltage	with respect to Vss	-0.5 ~ 4.6	V
VO	Output Voltage	with respect to Vss	-0.5 ~ 4.6	V
IO	Output Current		50	mA
Pd	Power Dissipation	Ta=25°C	39	W
Topr	Operating Temperature		0 ~ 70	°C
Tstg	Storage Temperature		-45 ~ 100	°C

Description

The MH32S72BBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 16M x 4 Sy nchronous DRAMs in TSOP.

The stacked structure of TSOP MH32S72BBFA on a card edge dual inline package prov ides any application where high densities and large of quantities memory are required.

MH32S72BBFA is a socket-ty pe memory module ,suitable f or easy interchange or addition of module.