MH32S64PHB-6

Features:

·Utilizes industry standard 16M X 8 Synchronous DRAMs in TSOP package
·Single 3.3V +/- 0.3V supply
·Max.Clock frequency 133MHz
·Fully synchronous operation referenced to clock rising edge
·4-bank operation controlled by BA0,BA1(Bank Address)
·/CAS latency -2/3(programmable,at buffer mode)
·LVTTL Interface
·Burst length 1/2/4/8/Full Page(programmable)
·Burst type- Sequential and interleave burst (programmable)
·Random column access
·Burst Write / Single Write(programmable)
·Auto precharge / All bank precharge controlled by A10
·Auto refresh and Self refresh
·4096 refresh cycles every 64ms


Application

Main memory or graphic memory in computer systems


Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vdd	Supply voltage	With respect to Vss	-0.5~4.6	V
VI	Input Voltage	With respect to Vss	-0.5~4.6	V
VO	Output Voltage	With respect to Vss	-0.5~4.6	V
IO	Output current		50	mA
Pd	Power dissipation	Ta=25C	16	W
Topr	Operating temperature		0~70	C
Tstg	Storage temperature		-45~100	C

Description

The MH32S64PHB is 33554432 - word x 64-bit Synchronous DRAM module. This consist of sixteen industry standard
16M x 8 Synchronous DRAMs in TSOP.

The TSOP MH32S64PHB on a card edge dual in-line package provides any application where high densities and large of quantities
memory are required.

MH32S64PHB is a socket-type memory module ,suitable for easy interchange or addition of module.