MH2S64CWXTJ-12

Features:

·Utilizes industry standard 1M x 16 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP
·168-pin (84-pin dual in-line package)
·single 3.3V±0.3V power supply
·Clock frequency 83MHz/67MHz
·Fully synchronous operation referenced to clock rising edge
·Dual bank operation controlled by BA(Bank Address)
·/CAS latency- 1/2/3(programmable)
·Burst length- 1/2/4/8(programmable)
·Burst type- sequential / interleave(programmable)
·Column access - random
·Auto precharge / All bank precharge controlled by A10
·Auto refresh and Self refresh
·4096 refresh cycle /64ms
·LVTTL Interface



Application

main memory or graphic memory in computer systems


Specifications

Symbol	Parameter	Condition	Ratings	Unit
Vdd	Supply Voltage	with respect to Vss	-0.5 ~ 4.6	V
VI	Input Voltage	with respect to Vss	-0.5 ~ 4.6	V
VO	Output Voltage	with respect to Vss	-0.5 ~ 4.6	V
IO	Output Current		50	mA
Pd	Power Dissipation	Ta=25°C	8	W
Topr	Operating Temperature		0 ~ 70	°C
Tstg	Storage Temperature		-45 ~ 100	°C

Description

The MH2S64CWXTJ is 2097152-word by 64-bit Synchronous DRAM module. This consists of eight industry standard 1Mx16 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP.

The mounting of TSOP MH2S64CWXTJ on a card edge Dual Inline package provides any application where high densities and large quantities of memory are required.

MH2S64CWXTJ is a socket type - memory modules, suitable for easy interchange or addition of modules.