MH203

Features:

• +32 dBm IIP3
• RF 800 960 MHz
• IF 200 350 MHz
• High-side LO configuration
• +17 dBm Drive Level
• Low Cost SOIC-8 Package
• No External Bias Required


Application

Mobile Infrastructure


Specifications

Operating Case Temperature      -40° to +85 °C
Storage Temperature               -65° to +100 °C
Maximum Input LO Power6                     +21 dBm


Description

The MH203 is a passive GaAs MESFET mixer that provides high dynamic range performance in a low cost SOIC-8 package. WJ's MH203 uses patented techniques to realize +32 dBm Input IP3 at an LO drive level of +17 dBm when used in a simple application circuit as an upconverting or downconverting high-side LO configuration. This single monolithic integrated circuit does not require any external baluns or bias elements.

MH203 applications include frequency up/down conversion, modulation and demodulation for receivers and transmitters used in 2.5G and 3G systems using the cellular and GSM frequency bands.