MH16V725BWJ-5.

Features:

Type name	/RAS access time (max.ns)	/CAS access time (max.ns)	Address access time (max.ns)	/OE access time (max.ns)	Cycle time (min.ns)	Power dissipation (typ.W)
MH16V725BWJ-5	50	13	25	84	84	5.40
MH16V725BWJ-6	60	15	30	104	104	4.50

·Utilizes industry standard 16M x 4 RAMs in SOJ and industry
 standard EEPROM in TSSOP
·168-pin (84-pin dual dual in-line package)
·Single +3.3V(±0.3V) supply operation
·Low stand-by power dissipation
 32.4mW(Max) . . . . . . . . . . . . . . . . . . . LVCMOS input level
·Low operation power dissipation
          MH16V725BWJ -5 . . . . . . . . . . . . . . . . . . 6.48W(Max)
          MH16V725BWJ -6 . . . . . . . . . . . . . . . . . . 5.84W(Max)
·All input are directly LVTTL compatible
·All output are three-state and directly LVTTL compatible
·Includes(0.22uF x 18) decoupling capacitors
·4096 refresh cycle every 64ms (CBR Ref)
·8192 refresh cycle every 64ms (RAS Only Ref,Normal R/W)
·Hyper-page mode,Read-modify-write,
 /CAS before /RAS refresh,Hidden refresh capabilities
·Gold plating contact pads

Row Address	A0 ~ A12
Column Address	A0 ~ A10

Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vcc	Supply voltage	With respect to Vss	-0.5~ 4.6	V
VI	Supply voltage		-0.5~ 4.6	V
VO	Supply voltage		-0.5~ 4.6	V
IO	Output current		50	mA
Pd	Power dissipation	Ta=25°C	18	W
Topr	Operating temperature		0~70	°C
Tstg	Storage temperature		-40~125	°C

Description

The MH16V725BWJ is 16777216-word x 72-bit dynamic ram module. This consist of eighteen industry standard 16M x 4 dynamic RAMs in SOJ and one industry standard EEPROM in TSSOP.

The mounting of SOJs and TSSOP MH16V725BWJ on a card edge dual in-line package provides any application where high  densities and large of quantities memory are required. This is a socket-type memory module ,suitable for easy interchange or addition of module.