MH16V725BATJ-5

Features:

Type name	/RAS access time (max.ns)	/CAS access time (max.ns)	Address access time (max.ns)	/OE access time (max.ns)	Cycle time (min.ns)	Power dissipaton (typ.W)
MH16V725BATJ-5	50	18	30	18	84	5.50
MH16V725BATJ-6	60	20	35	20	104	4.60

 

·Utilizes industry standard 16M x 4 RAMs TSOP and industry standard
  input  buffer in TSSOP
·168-pin (84-pin dual in-line pacege)
·Single 3.3V(+/-0.3V) supply operation
·Low stand-by power dissipation . . . . . . . . 121mW(Max)
·Low operation power dissipation
          MH16V725BATJ -5 . . . . . . . . . . . . . . . . . 6.58W(Max)
          MH16V725BATJ -6 . . . . . . . . . . . . . . . . . 5.94W(Max)
·All input,output LVTTL compatible
·Includes(0.22uF x 20) decoupling capacitors
·4096 refresh cycle every 64ms (A0~A12)
· JEDEC standard pin configration & Buffered PD pin   Buffered   input 
  except /RAS and DQ  Gold plating contact pads  
 

Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vcc	Supply voltage	With respect to Vss	-0.5~4.6	V
VI	Input voltage		-0.5~4.6
VO	Output voltage		-0.5~4.6
IO	Output current		50	mA
Pd	Power dissipation		21.6	W
Topr	Operating temperature		0~70	°C
Tstg	Storage temperature		-40~100	°C

Description

  The MH16V725BATJ is 16777216-word x 72-bit dynamic ram module. This consist of eighteen industry standard 16M x 4 dynamic RAMs in TSOP and three industry standard input buffer in TSSOP.
  The mounting of TSOP MH16V725BATJ on a card edge dual in-line package provides any application where high densities and large of quantities memory are
required.
  MH16V725BATJ is a socket-type memory module ,suitable for easy interchange or addition of module.