MH16V7245BWJ-5

Features:

Type name	/RAS access time (max.ns)	/CAS access time (max.ns)	Address access time (max.ns)	/OE access time (max.ns)	Cycle time (min.ns)	Power dissipaton (typ.W)
MH16V7245BWJ-5	50	13	25	13	84	7.02
MH16V7245BWJ-6	60	15	30	15	104	5.85

·Utilizes industry standard 16M x 4 RAMs i SOJ and industry standard EEPROM in TSSO
·168-pin (84-pin dual dual in-line package)
·Single +3.3V(±0.3V) supply operation
·Low stand-by power dissipation 32.4mW(Max) . . . . . . . . . . . . . . . . . . . LVCMOS input level
·Low operation power dissipation
          MH16V7245BWJ -5 . . . . . . . . . . . . . . . . . . 8.43W(Max)
          MH16V7245BWJ -6 . . . . . . . . . . . . . . . . . . 7.78W(Max)
·All input are directly LVTTL compatible
·All output are three-state and directly LVTTL compatible
·Includes(0.22uF x 18) decoupling capacitors
·4096 refresh cycle every 64ms
·Hyper-page mode,Read-modify-write, /CAS before /RAS refresh,Hidden refresh capabilities
·Gold plating contact pads

 

 

Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vcc	Supply voltage	With respect to Vss	-0.5~ 4.6	V
VI	Input voltage		-0.5~ 4.6	V
VO	Output voltage		-0.5~ 4.6	V
IO	Output current			mA
Pd	Power dissipation	Ta=25°C		W
Topr	Operating temperature			°C
Tstg	Storage temperature			°C

Description

The MH16V7245BWJ is 16777216-word x 72-bit dynamicram module. This consist of eighteen industry standard 16M x 4 dynamic RAMs in SOJ and one industry standard EEPROM in TSSOP.

The mounting of SOJs and TSSOP MH16V7245BWJ on a card edge dual in-line package provides any application where high densities and large of quantities memory are required.

MH16V7245BWJ is a socket-type memory module ,suitable for easy interchange or addition of module.