MH16V645BWJ-5

Features:

Type name	/RAS access time (max.ns)	/CAS access time (max.ns)	Address access time (max.ns)	/OE access time (max.ns)	Cycle time (min.ns)	Power dissipation (typ.W)
MH16V645BWJ-5	50	13	25	13	84	4.80
MH16V645BWJ-6	60	15	30	15	104	4.00

·Utilizes industry standard 16M x 4 RAMs in SOJ and industry
standard EEPROM in TSSOP
·168-pin (84-pin dual dual in-line packag
·Single +3.3V(±0.3V) supply operation
·Low stand-by power dissipation
28.8mW(Max) . . . . . . . . . . . . . . . . . . . LVCMOS input level
·Low operation power dissipation
MH16V645BWJ -5 . . . . . . . . . . . . . . . . . . 5.76W(Max)
MH16V645BWJ -6 . . . . . . . . . . . . . . . . . . 5.19W(Max)
·All input are directly LVTTL compatible
·All output are three-state and directly LVTTL compatible
·Includes(0.22uF x 16) decoupling capacitors
·4096 refresh cycle every 64ms
·Hyper-page mode,Read-modify-write,
/CAS before /RAS refresh,Hidden refresh capabilities
·Gol plating contact pads

Row Address	A0 ~ A12
Column Address	A0 ~ A10

 

Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vcc	Supply voltage	With respect to Vss	-0.5~ 4.6	V
VI	Input voltage		-0.5~ 4.6	V
VO	Output voltage		-0.5~ 4.6	V
IO	Output current		50	mA
Pd	Power dissipation	Ta=25°C	16	W
Topr	Operating temperature		0~70	°C
Tstg	Storage temperature		-40~125	°C

Description

The MH16V645BWJ is 16777216-word x 64-bit dynamic ram module. This consist of sixteen industry standard 16M x 4 dynamic RAMs in SOJ and one industry standard EEPROM in TSSOP.

The mounting of SOJs and TSSOP MH16V645BWJ on a card edge dual in-line package provides any application where high densities and large of quantities memory are required.

MH16V645BWJ is a socket-type memory module ,suitable for easy interchange or addition of module.