MH16V644AWJ-5

Features:

Type name	/RAS access time (max.ns)	/CAS access time (max.ns)	Address access time (max.ns)	/OE access time (max.ns)	Cycle time (min.ns)	Power dissipation (typ.W)
MH16V644AWJ-5	50	13	25	13	90	6.24
MH16V644AWJ-6	60	15	30	15	110	5.20

 ·Utilizes industry standard 16M x 4 RAMs in SOJ and industry
    standard EEPROM in TSSOP 
 ·168-pin (84-pin dual dual in-line package)
 ·Single +3.3V(±0.3V) supply operation
 ·Low stand-by power dissipation
        17.28mW(Max) . . . . . . . . . . . . . . . . . . . LVCMOS input level
 ·Low operation power dissipation
             MH16V64AWJ -5 . . . . . . . . . . . . . . . . . . 7.49W(Max)
             MH16V64AWJ -6 . . . . . . . . . . . . . . . . . . 6.92W(Max)
 ·All input are directly LVTTL compatible
 ·All output are three-state and directly LVTTL compatible
 ·Includes(0.22uF x 16) decoupling capacitors
 · 4096 refresh cycle every 64ms
 ·Fast-page mode,Read-modify-write,
    /CAS before /RAS refresh,Hidden refresh capabilities
 ·Gold plating contact pads

Row Address	A0 ~ A11
Column Address	A0 ~ A11

Specifications

v

Symbol	Parameter	Conditions	Ratings	Unit
Vcc	Supply voltage	With respect to Vss	-0.5~ 4.6	V
IO	Output current		50	mA
Pd	Power dissipation	Ta=25°C	16	W
Topr	Operating temperature		0~70	°C
Tstg	Storage temperature		-40~125	°C

Description

The MH16V644AWJ is 16777216-word x 64-bit dynamic ram module. This consist of sixteen industry standard 16M x 4 dynamic RAMs in SOJ and one industry standard EEPROM in TSSOP.

The mounting of SOJs and TSSOP MH16V644AWJ on a card edge dual in-line package provides any application where high densities and large of quantities memory are required. MH16V644AWJ is a socket-type memory module ,suitable for easy interchange or addition of module.