MH16V6445BWJ-5

Features:

Type name	/RAS access time (max.ns)	/CAS access time (max.ns)	Address access time (max.ns)	/OE access time (max.ns)	Cycle time (min.ns)	Power dissipation (typ.W)
MH16V6445BWJ-5	50	13	25	13	84	6.24
MH16V6445BWJ-6	60	15	30	15	104	5.20

 

·Utilizes industry standard 16M x 4 RAMs in SOJ and industry
    standard EEPROM in TSSOP
·168-pin (84-pin dual dual in-line package)
·Single +3.3V(±0.3V) supply operation
·Low stand-by power dissipation
     28.8mW(Max) . . . . . . . . . . . . . . . . . . . LVCMOS input level
·Low operation power dissipation
           MH16V6445BWJ -5 . . . . . . . . . . . . . . . . . . 7.49W(Max)
           MH16V6445BWJ -6 . . . . . . . . . . . . . . . . . . 6.91W(Max)
·All input are directly LVTTL compatible
·All output are three-state and directly LVTTL compatible
·Includes(0.22uF x 16) decoupling capacitors
·Hyper-page mode,Read-modify-write,
   /CAS before /RAS refresh,Hidden refresh capabilities
·Gold plating contact pads

 

Row Address	A0 ~ A11
Column Address	A0 ~ A11

 

 

 

 

 

Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vcc	Supply voltage	With respect to Vss	-0.5~ 4.6	V
VI	Input voltage		-0.5~ 4.6	V
VO	Output voltage		-0.5~ 4.6	V
IO	Output current		50	mA
Pd	Power dissipation	Ta=25°C	16	W
Topr	Operating temperature		0~70	°C
Tstg	Storage temperature		-40~125	°C

Description

The MH16V6445BWJ is 16777216-word x 64-bit dynamic ram module. This consist of sixteen industry standard 16M x 4 dynamic RAMs in SOJ and one industry standard EEPROM in TSSOP.

The mounting of SOJs and TSSOP on a card edge dual in-line package of MH16V6445BWJ provides any application where high densities and large of quantities memory are required.

MH16V6445BWJ is a socket-type memory module ,suitable for easy interchange or addition of module.