MH16S72PHC-10

Features:

Clock frequency 100MHz single 3.3V±0.3V power supply Fully synchronous operation referenced to clock rising
edge Burst length- 1/2/4/8/Full Page(programmable) 4 bank operation controlled by BA0,1(Bank Address)
/CAS latency- 2/3(programmable) Auto precharge / All bank precharge controlled by A10 Burst type- sequential / interleave(programmable) Column access - random LVTTL Interface Auto refresh and Self refresh 4096 refresh cycle /64ms Utilizes industry standard 8M x 16 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP
168-pin (84-pin dual in-line package) Discrete IC and module design conform to PC100 specification. (module Spec. Rev. 1.0 and SPD 1.2A(-7,-8), SPD 1.0(-10))


Specifications

MAXIMUM RATINGS
Symbol	Parameter	Condition	Ratings	Unit
Vdd	Supply Voltage	with respect to Vss	-0.5 ~ 4.6	V
VI	Input Voltage	with respect to Vss	-0.5 ~ 4.6	V
VO	Output Voltage	with respect to Vss	-0.5 ~ 4.6	V
IO	Output Current		50	mA
Pd	Power Dissipation	Ta=25°C	10	W
Topr	Operating Temperature		0 ~ 70	°C
Tstg	Storage Temperature		-40 ~ 100	°C

Description

The MH16S72PHC is 16777216 - word by 72-bit Synchronous DRAM module. MH16S72PHC consists of ten industry standard 8Mx16 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP. The mounting of TSOP on a card edge Dual Inline package provides any application where high densities and large quantities of memory are required. This is a socket type - memory modules, suitable for easy interchange or addition of modules.