MH16S72AMA

Features:

Clock frequency 125MHz/100MHz/83MHz single 3.3V±0.3V power supply Fully synchronous operation referenced to clock rising edge Burst length- 1/2/4/8(programmable) Dual bank operation controlled by BA0,1(Bank Address)
/CAS latency- 2/3(programmable) Auto precharge / All bank precharge controlled by A10
Burst type- sequential / interleave(programmable) Column access - random LVTTL Interface
Auto refresh and Self refresh 4096 refresh cycle /64ms Utilizes industry standard 16M x 4 Synchronous DRAMs
TSOP and industry standard EEPROM in TSSOP 168-pin (84-pin dual in-line package)

Specifications

MAXIMUM RATINGS
Symbol	Parameter	Condition	Ratings	Unit
Vdd	Supply Voltage	with respect to Vss	-0.5 ~ 4.6	V
VI	Input Voltage	with respect to Vss	-0.5 ~ Vdd+0.5	V
VO	Output Voltage	with respect to Vss	-0.5 ~ Vdd+0.5	V
IO	Output Current		50	mA
Pd	Power Dissipation	Ta=25°C	18	W
Topr	Operating Temperature		0 ~ 70	°C
Tstg	Storage Temperature		-40 ~ 100	°C

Description

The MH16S72AMA is 16777216 - word by 72-bit Synchronous DRAM module. This consists of eighteen industry standard 16Mx4 Synchronous DRAMs in TSOP and one industory standard
EEPROM in TSSOP. The mounting of TSOP on a card edge Dual Inline package provides any application where high densities and large quantities of memory are required. MH16S72AMA is a socket type - memory modules, suitable for easy interchange or addition of modules.