MH16S64FFB-10

Features:

	Frequency	CLK Access Time (Component SDRAM)
-10,10L	100MHz	8.0ns(CL=3)

·Utilizes industry standard 16M x 8 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP
·144-pin (72-pin dual in-line package)
·single 3.3V±0.3V power supply
·Clock frequency 100MHz(max.)
·Fully synchronous operation referenced to clock rising edge
·4 bank operation controlled by BA0,1(Bank Address)/CAS latency- 2/3(programmable)
·Burst length- 1/2/4/8/Full Page(programmable)
·Burst type- sequential / interleave(programmable)
·Auto precharge / All bank precharge controlled by A10
·Column access - random
·LVTTL Interface



Specifications

Symbol	Parameter	Condition	Ratings	Unit
Vdd	Supply Voltage	with respect to Vss	-0.5 ~4.6	V
VI	Input Voltage	with respect to Vss	-0.5~ 4.6	V
VO	Output Voltage	with respect to Vss	-0.5 ~ 4.6	V
IO	Output Current		50	mA
Pd	Power Dissipation	Ta=25°C	8	W
Topr	Operating Temperature		0 ~ 70
Tstg	Storage Temperature		-40 ~ 100

Description

The MH16S64FFB is 16777216 - word by 64-bit Synchronous DRAM module. This consists of eight industry standard 16Mx8 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP.

The mounting of TSOP MH16S64FFB on a card edge Dual Inline package provides any application where high densities and large quantities of memory are required.

MH16S64FFB is a socket type - memory modules, suitable for easy interchange or addition of modules.