MH16S64BAMD-10

Features:

Utilizes industry standard 8M x 8 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP
168-pin (84-pin duClock frequency 100MHz
single 3.3V±0.3V power supply
Fully synchronous operation referenced to clock rising edge
Burst length- 1/2/4/8/Full Page(programmable)
4 bank operation controlled by BA0,1(Bank Address)
/CAS latency- 2/3(programmable)
Auto precharge / All bank precharge controlled by A10
Burst type- sequential / interleave(programmable)
Column access - random
LVTTL Interface
Auto refresh and Self refresh
4096 refresh cycle /64ms
Discrete IC and module design conform to PC100 specification.
(module Spec. Rev. 1.0 and
SPD 1.2A(-7,-8), SPD 1.0(-10))


Specifications

MAXIMUM RATINGS
Symbol	Parameter	Condition	Ratings	Unit
Vdd	Supply Voltage	with respect to Vss	-0.5 ~ 4.6	V
VI	Input Voltage	with respect to Vss	-0.5 ~ Vdd+0.5	V
VO	Output Voltage	with respect to Vss	-0.5 ~ Vdd+0.5	V
IO	Output Current		50	mA
Pd	Power Dissipation	Ta=25°C	16	W
Topr	Operating Temperature		0 ~ 70	°C
Tstg	Storage Temperature		-40 ~ 100	°C

Description

  The MH16S64BAMD is 16777216 word X 64 bit
Synchronous DRAM module. MH16S64BAMD consists of sixteen
industry standard 8Mx8 Synchronous DRAMs in
TSOP and one industory standard EEPROM in
TSSOP.
  The mounting of TSOP on a card edge Dual Inline
package of MH16S64BAMD provides any application where high
densities and large quantities of memory are
required.
  MH16S64BAMD is a socket type - memory modules, suitable for
easy interchange or addition of modules.