MH16S64APHB-6

Features:

	Frequency	CLK Access Time (Component SDRAM)
-6	133MHz	5.4ns(CL=3)
-7	100MHz	6.0ns(CL=2)
-8	100MHz	6.0ns(CL=3)

·Utilizes industry standard 16M x 8 Synchronous DRAMs 
 TSOP and industry standard EEPROM in TSSOP

·168-pin (84-pin dual in-line package)

·single 3.3V±0.3V power supply

·Max. Clock frequency -6:133MHz,-7,8:100MHz

·Fully synchronous operation referenced to clock rising edge

·4 bank operation controlled by BA0,1(Bank Address)

·/CAS latency- 2/3(programmable)

·Burst length- 1/2/4/8/Full Page(programmable)

·Burst type- sequential / interleave(programmable)

·Column access - random

·Auto precharge / All bank precharge controlled by A10

·Auto refresh and Self refresh

·4096 refresh cycle /64ms

·LVTTL Interface

·Discrete IC and module design conform to
 PC100/PC133 specification.


Specifications

Symbol	Parameter	Condition	Ratings	Unit
Vdd	Supply Voltage	with respect to Vss	-0.5 ~ 4.6	V
VI	Input Voltage	with respect to Vss	-0.5 ~ Vdd+0.5	V
VO	Output Voltage	with respect to Vss	-0.5 ~ Vdd+0.5	V
IO	Output Current		50	mA
Pd	Power Dissipation	Ta=25°C	8	W
Topr	Operating Temperature		0 ~ 70	°C
Tstg	Storage Temperature		-40 ~ 100	°C

Description

The MH16S64APHB is 16777216 - word by 64-bit Synchronous DRAM module. This consists of eight industry standard 16Mx8 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP.

The mounting of TSOP on a card edge Dual Inline package of MH16S64APHB provides any application where high densities and large quantities of memory are required.

MH16S64APHB is a socket type - memory modules, suitable for easy interchange or addition of modules.