MH16S64AMA-8

Features:

	Frequency	CLK Access Time (Component SDRAM)
-8	125MHz	6ns(CL=3)
-10	100MHz	8ns(CL=3)
-12	83MHz	8ns(CL=3))

`Utilizes industry standard 16M x 4 Synchronous DRAMs

`TSOP and industry standard EEPROM in TSSOP
`168-pin (84-pin dual in-line package)

`Clock frequency 125MHz/100MHz/83MHz

`single 3.3V±0.3V power supply

`Fully synchronous operation referenced to clock rising edge

`Dual bank operation controlled by BA0,1(Bank Address)

`/CAS latency- 2/3(programmable)

`Burst length- 1/2/4/8(programmable)

`Burst type- sequential / interleave(programmable)

`Column access - random

`Auto precharge / All bank precharge controlled by A10

`4096 refresh cycle /64ms

`LVTTL InterfaceLVTTL Interface

 

Specifications

Symbol	Parameter	Condition	Ratings	Unit
Vdd	Supply Voltage	with respect to Vss	-0.5 ~ 4.6	V
VI	Input Voltage	with respect to Vss	-0.5 ~ Vdd+0.5	V
VO	Output Voltage	with respect to Vss	-0.5 ~ Vdd+0.5	V
IO	Output Current		50	mA
Pd	Power Dissipation	Ta=25°C	16	W
Topr	Operating Temperature		0 ~ 70	°C
Tstg	Storage Temperature		-40 ~ 100	°C

Description

The MH16S64AMA is 16777216 - word by 64-bit Synchronous DRAM module. This consists of sixteen industry standard 16Mx4 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP.

The mounting of TSOP on a card edge Dual Inline package of MH16S64AMA provides any application where high densities and large quantities of memory are required.

MH16S64AMA is a socket type - memory modules, suitable for easy interchange or addition of modules.