MH101

    Parameter                                         Rating
 Operating Case Temperature          -40 to +85°C
 Storage Temperature                     -65 to +10
Maximum Input LO Powe                    +21 dBm
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1. Operation of this device above any of these parameters may cause permanent damage
2. Total sum of LO port and RF port power should not to exceed +23 dBm

The MH101 is a passive GaAs MESFET mixer that provides high dynamic range performance in a low cost SOIC-8 package. WJ's MH101 uses patented techniques to realize greater than +30 dBm Input IP3 at an LO drive level of +17 dBm.

This MH101 single monolithic integrated circuit does not require any external baluns, bias, matching, or decoupling elements. The on-chip diplexer affords good matching on the RF and IF ports.

Typical applications of MH101 include frequency up/down conversion, modulation and demodulation for receivers and transmitters used in 3G UMTS systems.