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MGW21N60ED

Specifications Rating Symbol Value Unit CollectorEmitter Voltage VCES 600 Vdc CollectorGate Voltage (RGE = 1.0 MW) VCGR 600 Vdc GateEmitter Voltage - Continuous VGE ±20 Vdc Collector Current - Continuous @ TC = 25°C- Continuous @ TC = 90°C- Repetitive Pulsed Current (1...

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MGW21N60ED: Specifications Rating Symbol Value Unit CollectorEmitter Voltage VCES 600 Vdc CollectorGate Voltage (RGE = 1.0 MW) VCGR 600 Vdc GateEmitter Voltage - Continuous VGE ±20 Vdc...

MGW21N60ED Data Sheet

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Part Number:
MGW21N60ED
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

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Specifications

Rating Symbol Value Unit
CollectorEmitter Voltage VCES 600 Vdc
CollectorGate Voltage (RGE = 1.0 MW) VCGR 600 Vdc
GateEmitter Voltage - Continuous VGE ±20 Vdc
Collector Current - Continuous @ TC = 25°C
- Continuous @ TC = 90°C
- Repetitive Pulsed Current (1)		 IC25
IC90
ICM		 66
40
132		 Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C		 PD 260
2.08		 Watts
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg 55 to 150 °C
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, RG = 20 W)		 tsc 10 s
Thermal Resistance - Junction to Case IGBT
Thermal Resistance - Junction to Ambient		 RqJC
RqJA		 0.48
35		 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds TL 260 °C
Mounting Torque, 632 or M3 screw 10 lbfin (1.13 Nm)



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