MGA-64135

Features: • Cascadable 50 W Gain Block• Broadband Performance: 26ÊGHz 12.0 dB Typical Gain ± 0.8 dB Gain Flatness 12.0 dBm P1 dB• Single Supply Bias• Cost Effective Ceramic Microstrip PackageSpecifications Symbol Parameter Units AbsoluteMaximum Vd Device V...

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SeekIC No. : 004419679 Detail

MGA-64135: Features: • Cascadable 50 W Gain Block• Broadband Performance: 26ÊGHz 12.0 dB Typical Gain ± 0.8 dB Gain Flatness 12.0 dBm P1 dB• Single Supply Bias• Cost Effective Cer...

floor Price/Ceiling Price

Part Number:
MGA-64135
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Cascadable 50 W Gain Block
• Broadband Performance: 26ÊGHz 12.0 dB Typical Gain ± 0.8 dB Gain Flatness 12.0 dBm P1 dB
• Single Supply Bias
• Cost Effective Ceramic Microstrip Package



Specifications

Symbol Parameter Units Absolute
Maximum
Vd Device Voltage, RF Output
to Ground
V 9
Pdiss
Total Power Dissipation[2] mW 650
Pin CW RF Input Power dBm +13
Tj Junction Temperature °C 175
TSTG Storage Temperature °C -65 to 175
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Bias is assumed at DC quiescent conditions.



Description

The MGA-64135 is a high performance gallium arsenide Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. MGA-64135 is designed for use as a general purpose 50 ohm gain block in the 2 to 6ÊGHz frequency range. Typical applications include narrow and broadband IF and RF amplifiers for commercial, industrial, and military requirements.

This MGA-64135 MMIC is a cascade of two stages, each utilizing shunt feedback to establish a broadband impedance match. The source of each stage is AC grounded to allow biasing from a single positive power supply. The interstage blocking capacitor as well as a resistive "self-bias" network are included on chip. The die is fabricated using HP's nominal .5 micron recessed Schottky-barrier-gate, gold metallization and silicon nitride passivation to achieve excellent performance, uniformity, and reliability.




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