Features: • Near 50 broadband output match• Single +3.3V supply• High Gain & OIP3• Miniature 2 x 2 x 0.75 mm LPCC package• Pb-free & MSL-1 package• Tape-and-Reel packaging option availableSpecifications Symbol Parameter Units AbsoluteMaximum[1] ...
MGA-425P8: Features: • Near 50 broadband output match• Single +3.3V supply• High Gain & OIP3• Miniature 2 x 2 x 0.75 mm LPCC package• Pb-free & MSL-1 package• Tape-a...
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Symbol | Parameter | Units | Absolute Maximum[1] |
VdS | Device Voltage [2] | V | 5 |
IdS | Device Current [2] | A | 100 |
Pinmax. | RF Input Power | dBm | 13 |
Pdiss | Total Power Dissipation[3] | W | 0.5 |
Tch | Channel Temperature | °C | 150 |
TSTG | Storage Temperature | °C | -65 to 150 |
ch_b | Thermal Resistance[4] | °C/W | 34.2 |
Agilent Technologies's MGA-425P8 power amplifier is designed for wireless application in the 210 GHz frequency range. The PA has a high power efficiency (PAE) achieved through the use of Agilent Technologies's proprietary GaAs Enhancement-mode pHEMT process.
MGA-425P8 is housed in a miniature 2.0 x 2.0 x 0.75 mm 8-lead leadlessplastic- chip-carrier (LPCC) package.
The compact footprint, low profile couple with the excellent thermal efficiency of the LPCC package makes the MGA-425P8 an ideal choice as power amplifier that saves board space.
On-chip bias circuitry allows operation from a single +3.3V power supply. The output of the amplifier is near to 50 (below 2:1 VSWR) around 4.95.8 GHz. This makes MGA-425P8 an ideal choice as power amplifier for broadband IEEE 802.11a system as well as other high performance wireless application in the 210 GHz frequency range.One external resistor (RBias) is used to set the bias current of the device over a wide range. This allows the designer to use the same part in several circuit positions and tailor the output power/ linearity performance, and current consumption, to suit each position.