Features: ·High Input Impedance ·Enhancement Mode ·Electrodes are isolated from case.Specifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1700 V Gate-emitter voltage VGES 200 V Collector current DC IC 1200 A 1ms ICP 2400 Forward cu...
MG1200V1US51: Features: ·High Input Impedance ·Enhancement Mode ·Electrodes are isolated from case.Specifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1700 V Gate-e...
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Application·High input impedance ·Enhancement mode ·Electrodes are isolated from case. Specificati...
Characteristics | Symbol | Rating | Unit | |
Collector-emitter voltage | VCES | 1700 | V | |
Gate-emitter voltage | VGES | 200 | V | |
Collector current | DC | IC | 1200 | A |
1ms | ICP | 2400 | ||
Forward current | DC | IF | 1200 | A |
1ms | IFM | 2400 | ||
Total power dissipation (Tc=25°C) | PC | 5560 | W | |
Junction temperature | Tj | −20~125 | ||
Storage temperature range | Tstg | −40 ~ 125 | ||
Isolation voltage | VIsol | 5400 (AC 1min) |
V | |
Screw Torque | Terminal: M4/M8 | 2 / 7 | N`m | |
Mounting | 4 |