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MG11

Features: Full Range of Matrices up to 500k Cells0.6 m Drawn CMOS, 3 Metal Layers, Sea of GatesRAM, DPRAM, FIFO CompilersLibrary Optimised for Synthesis, Floor Plan & AutomaticTest Generation (ATG)High Speed Performances : 250 ps Typical Gate Delay @5 V 350 MHz Toggle Frequency @5 VHigh Syst...

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SeekIC No. : 004419483 Detail

MG11: Features: Full Range of Matrices up to 500k Cells0.6 m Drawn CMOS, 3 Metal Layers, Sea of GatesRAM, DPRAM, FIFO CompilersLibrary Optimised for Synthesis, Floor Plan & AutomaticTest Generation (A...

MG11 Data Sheet

floor Price/Ceiling Price

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Part Number:
MG11
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

Full Range of Matrices up to 500k Cells
0.6 m Drawn CMOS, 3 Metal Layers, Sea of Gates
RAM, DPRAM, FIFO Compilers
Library Optimised for Synthesis, Floor Plan & Automatic
Test Generation (ATG)
High Speed Performances :
  250 ps Typical Gate Delay @5 V
  350 MHz Toggle Frequency @5 V
High System Frequency Skew Control :
  250 MHz PLL for Clock Generation
  Clock Tree Synthesis Software
3 & 5 Volts Operation; Single or Dual Supply Modes
Low Power Consumption :
  0.9 W/Gate/MHz @3 V
  2.4 W/Gate/MHz @5 V
Integrated Power on Reset
Matrices With More than 500 Pads
Standard 3, 6, 12m, 24mA I/Os, parallelism up to 48mA
Versatile I/O Cell : Input, Output, I/O, Supply, Oscillator
CMOS/TTL/PCI Interface
ESD (2 kV) And Latch-up Protected I/O


Specifications

Ambient temperature under bias (TA)
Military . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . 55 to +125°C
Junction temperature . . . . . . . . . . . . . . . . . . TJ < TA + 20°C
Storage temperature . . . . . . . . . . . . . . . . . . 65 to +150°C
TTL/CMOS :
Supply voltage VDD . . . . . . . . . . . . . . . . . . . 0.5 V to +7 V
I/O voltage . . . . . . . . . . . . . . . .. . . . 0.5 V to VDD + 0.5 V
Stresses above those listed may cause permanent damage to the device. Explosure to absolute maximum rating conditions for extended period may affect device reliability.


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