MG100Q1JS9

The MG100Q1JS9 is one member of the MG100Q1JS family which designed as the silicon N-channel IGBT. It has five points of features:(1)high input impe-dance;(2)high speed:tf=0.5s (max.) and trr=0.5s (max.);(3)low saturation voltage:VCE(sat)=4.0 V (max.);(4)enhancement-mode;(5)the electrodes are isolated from case.

The absolute maximum ratings of the MG100Q1JS9 can be summarized as:(1)collector-emitter voltage:1200 V;(2)gate-emitter voltage:+/-20 V;(3)colletor current (DC):100 A;(4)colletor current (1 ms):200 A;(5)forward current (DC):100 A;(6)forward current (1 ms):200 A;(7)collector power dissipation (Tc=25): 670 W;(8)junction temperature:150;(9)storage temperature range:-40 to +125;(10)isolation voltage:2500 (AC 1 min.) V;(11)screw torque (terminal/ mounting):3/3 N`m. If you want to know more information such as the electrical characteristics about the MG100Q1JS9, please download the datasheet in www.seekic.com or www.chinaicmart.com .