MG100H2DL1

The MG100H2DL1 is designed as one kind of TOSHIBA silicon N-channel IGBT GTR module that can be used in high power switching applications and motor control applications. Features of the MG100H2DL1 are:(1)high input impedance;(2)high speed: tf=0.35 us (max.) and trr=0.15 us (max.);(3)low saturation voltage: VCE(sat)= 3.5 V (max.);(4)enhancement-mode;(5)the electrodes are isolated from case.

The absolute maximum ratings of the MG100H2DL1 can be summarized as:(1)collector-emitter voltage: 600 V;(2)gate-emitter voltage: +/- 20 V;(3)collector current (DC): 100 A;(4)collector current (1 ms): 200 A;(5)forward current (DC): 100 A;(6)forward current (1 ms): 200 A;(7)collector power dissipation (Tc=25): 400 W;(8)junction temperature: 150 ;(9)storage temperature range: -40 to +125 ;(10)isolation voltage: 2500 V;(11)screw torque (terminal / mounting): 3 / 3 Nm.

The electrical characteristics of the MG100H2DL1 can be summarized as:(1)gate leakage current: +/-500 nA;(2)collector cut-off current: 1.0 mA;(3)collector-emitter breakdown voltage: 600 V;(4)gate-emitter cur-off voltage: 3.0 to 6.0 V;(5)collector-emitter saturation voltage: 2.7 to 3.5 V;(6)input capacitance: 8100 pF. If you want to know more information such as the electrical characteristics about the MG100H2DL1, please download the datasheet in www.seekic.com or www.chinaicmart.com .